Description
Feb 11, 2008 SPW47N60C3 . Cool MOS Power Transistor. VDS @ Tjmax. 650. V. RDS(on). 0.07. . ID. 47. A. Feature. New revolutionary high voltage IPP60R160C6 SPA24N60C3 IPA60R160C6. SPW24N60C3 IPW60R160C6. 0.10 . SPW35N60C3 IPW60R099C6. 0.07 . SPW47N60C3 IPW60R070C6 The world is evolving into a place of always-on interconnectivity demanding reliable, high performance and energy efficient solutions. Tiny, barely visible. Jan 17, 2008 SPW47N60C3 . SKW30N60HS. IGBT: Soft--- Low EMI. Low Switching . All rights reserved. Temperature stable. SPW47N60C3 . 266%. 125%. SPW47N60C3 . Issued. 24. December 2015. MA#. MA000976116. Package. PG- TO247-3-44. Weight*. 6067.84 mg. Construction Element. Material Group.
Part Number | SPW47N60C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Motorola |
Description | MOSFET N-CH 650V 47A TO-247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
Gate Charge (Qg) (Max) @ Vgs | 320nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 415W (Tc) |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
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