(4/5) based on 9 customer reviews
Description
DATASHEET MJE210 . Feature. Low Collector-Emitter Saturation Voltage. High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) Complement to MJE200. STMicroelectronics PREFERRED. SALESTYPE s. PNP TRANSISTOR. DESCRIPTION. The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 MJE200. MJE210 . 0.02 t, TIME (ms). 0.01. 0.02. 0.05. 1.0. 2.0. 5.0. 10. 20. 50. 100 . 200. 0.1. 0.5. 0.2. 1.0. 0.2. 0.1. 0.05 r(t), TRANSIENT THERMAL RESISTANCE. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. COMMON. -Voff. 500 F. MPF930. MTP8P10. MUR105. MJE210 . MTP12N10. MTP8P10. 150 . 3 W. 100 F. Iout. A. RB1. RB2. 1 F. IC PEAK. VCE PEAK. VCE.
| Part Number | MJE210 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Motorola |
| Description | TRANS PNP 40V 5A TO225AA |
| Series | - |
| Packaging | Bulk |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 5A |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
| Power - Max | 15W |
| Frequency - Transition | 65MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-225AA |
| Image |  |
MJE210
MOTOROLA/
6184
1.84
HK HEQING ELECTRONICS LIMITED
MJE210
MOTOLORA
38665
2.6825
Shenzhen Lichengda Technology Co.,LIMITED
MJE210
MOTOLOLA
3977
3.525
Belt (HK) Electronics Co
MJE210
MOTORLA
9414
4.3675
CIS Ltd (CHECK IC SOLUTION LIMITED)
MJE210
MOTROLA
50406
5.21
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
