(4/5) based on 13 customer reviews
Description
The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power. Process. EPITAXIAL PLANAR. Die Size. 83 x 83 MILS. Die Thickness. 11 MILS. Base Bonding Pad Area. 13.2 x 19.7 MILS. Emitter Bonding Pad Area. 0.70 2,000 40. 75. - -. - -. - -. 2N5336 NPN FAST SWITCH. 80. 80. 6.0. 10. 80. 30. 120 2,000 2.0. 0.70 2,000 30. 250. - -. - -. - -. 2N5337 NPN HIGH CURRENT 80. 0.70 2,000 40. 75. - -. - -. - -. 2N5336 NPN FAST SWITCH. 80. 80. 6.0. 10. 80. 30. 120 2,000 2.0. 0.70 2,000 30. 250. - -. - -. - -. 2N5337 NPN HIGH CURRENT 80.
| Part Number | 2N5336 |
| Brand | Motorola |
| Image |  |
2N5336
MOTOROLA/
6
0.45
Dark Horse Electronics
2N5336
MOTOLORA
3080
1.1475
ZHW High-tech (HK) Co., Limited
2N5336
MOTOLOLA
9055
1.845
Viassion Technology Co., Limited
2N5336
MOTORLA
5000
2.5425
WALTON ELECTRONICS CO., LIMITED
2N5336
MOTROLA
9559
3.24
MLC Europe B.V.
