(4/5) based on 17 customer reviews
Description
The CENTRAL SEMICONDUCTOR 2N5109 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high. SYMBOL. TEST CONDITIONS. MINIMUM. TYPICAL. MAXIMUM. UNITS. BVCEO. IC = 5.0 mA. 20. V. BVCER. IC = 5.0 mA. RBE = 10 . 40. V. BVCBO. IC = 100 CP229- 2N5109 . NPN - RF Transistor Die. 0.4 Amp, 20 Volt. MECHANICAL SPECIFICATIONS: Die Size. 21.7 x 21.7 MILS. Die Thickness. 8.7 MILS. Surface mount equivalent to 2N5109 . Low noise. Highly reliable hermetic package. SOT-23 footprint compatible. MAXIMUM RATINGS: (TA=25 C unless GEOMETRY. PROCESS DETAILS. PRINCIPAL DEVICE TYPE. 2N5109 . GROSS DIE PER 4 INCH WAFER. 21,000. PROCESS CP229. Small Signal Transistor.
| Part Number | 2N5109 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - RF |
| Brand | Motorola |
| Description | TRANS RF NPN 20V 400MA TO-39 |
| Series | - |
| Packaging | Bulk |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Frequency - Transition | 1.2GHz |
| Noise Figure (dB Typ @ f) | 3dB @ 200MHz |
| Gain | - |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 15V |
| Current - Collector (Ic) (Max) | 400mA |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Image |  |
2N5109
MOTOROLA/
16000
0.9
Finestock Electronics HK Limited
2N5109
MOTOLORA
180
1.6225
SUNTOP SEMICONDUCTOR CO., LIMITED
2N5109
MOTOLOLA
2035
2.345
FLOWER GROUP(HK)CO.,LTD
2N5109
MOTORLA
1000
3.0675
Antony Electronic Ltd.
2N5109
MOTROLA
6668
3.79
Belt (HK) Electronics Co
