Description
The CENTRAL SEMICONDUCTOR 2N4912 is a silicon. NPN power transistor manufactured by the epitaxial base process, mounted in a hermetically sealed FEATURES: 2N4912 . * Low Collector-Emitter Saturation Voltage. Vcsso-06V ( Max.) g c = 1.0 A. * Excellent Safe Operating Area. * Gain Specified to c= 1.0 Amp . 0.75. 0.05. 20. 2N4910. 2N4898. 1.0. 25. 40. 40. 20. 150. 0.5. 0.6. 1.0. 3.0. 2N4911. 2N4899. 1.0. 25. 60. 60. 20. 150. 0.5. 0.6. 1.0. 3.0. 2N4912 . 2N4900. 1.0 . 25. 0.75. 0.05. 20. 2N4910. 2N4898. 1.0. 25. 40. 40. 20. 150. 0.5. 0.6. 1.0. 3.0. 2N4911. 2N4899. 1.0. 25. 60. 60. 20. 150. 0.5. 0.6. 1.0. 3.0. 2N4912 . 2N4900. 1.0 . 25.
Part Number | 2N4912 |
Brand | Motorola |
Image |
2N4912
MOTOROLA/
46
1.57
Val Technologies, Inc
2N4912
MOTOLORA
20
2.71
KYO Inc.
2N4912
MOTOLOLA
5988
3.85
Viassion Technology Co., Limited
2N4912
MOTORLA
200
4.99
Xinnlinx Electronics Pte Ltd
2N4912
MOTROLA
80
6.13
FLOWER GROUP(HK)CO.,LTD