Description
C. NOTE: Stresses above those listed under Absolute Maximum. Ratings may cause permanent damage to the device. These are stress ratings only and Very low leakage can be achieved by using a diode-connected FET as shown. The 2N4117A is specified at 1 pA and its metal case shields the junction from Feb 18, 2011 Source together), such as 2N4117A . In applications where speed is important, silicon Schottky barrier diodes are worth considering, since they PUBLISHED BY NTERNATIONAL RECTIFIFF, 233 KANSAS STREET, FL SEGUNDO, CA 90245 (213) : Z2-2000. AN-976. Understanding and Using Power. INTRODUCTION. Sensing and/or controlling current flow is a fundamen- tal requirement in many electronics systems, and the techniques to do so are as diverse
Part Number | 2N4117A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - JFETs |
Brand | Motorola |
Description | MOSFET N-CH 40V 30UA TO-206AF |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Voltage - Breakdown (V(BR)GSS) | 40V |
Drain to Source Voltage (Vdss) | - |
Current - Drain (Idss) @ Vds (Vgs=0) | 30µA @ 10V |
Current Drain (Id) - Max | - |
Voltage - Cutoff (VGS off) @ Id | 600mV @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 10V |
Resistance - RDS(On) | - |
Power - Max | 300mW |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AF, TO-72-4 Metal Can |
Supplier Device Package | TO-206AF (TO-72) |
Image |
2N4117A
MOTOROLA/
8000
0.7
MY Group (Asia) Limited
2N4117A TO-18
MOTOLORA
2471
1.57
BD Electronics Ltd
2N4117A
MOTOLOLA
5000
2.44
Good Time Electronic Group Limited
2N4117A
MOTORLA
500
3.31
E-star Trading Enterprise Limited
2N4117A
MOTROLA
5998
4.18
Huajiaxin Electronic Technology (Hong Kong) Co., Limited