(5/5) based on 13 customer reviews
Description
DATASHEET MTP23P06V . Preferred Device. Power MOSFET. 23 Amps, 60 Volts. P Channel TO 220. This Power MOSFET is designed to withstand high energy in the. Oct 1, 1997 MTP23P06V . Q4. 6.8K. R9. 1N4001. D6. 2N3904. Q3. 100UH. L1. 1N4148. D4. D3. JUMPER. GND. BAT+. SEGG. SEGC. SEGD. SEGF. SEGB. Feb 18, 2010 MTP23P06V . MTP23P06VG. MTP2P50E. MTP2P50EG. MTP50P03HDL. MTP50P03HDLG. MTP75N05HD. NTP125N02R. NTP125N02RG. MTP23P06V . Q1. GND. DC. V+. THERM. BAT-. IN. DISCHG. BAT+. 16. 14. 12. 10 . 8. 6. 5. 4. 3. 2. NUMBER OF CELLS. DV2003S1, Rev A, 4/18/97. DV2003L1 MTP23P06V . Q4. 6.8K. R9. 1N4001. D6. 2N3904. Q3. 100UH. L1. 1N4148. D4. D3. JUMPER. GND. BAT+. SEGG. SEGC. SEGD. SEGF. SEGB. SNS. THERM.
| Part Number | MTP23P06V |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Motorola |
| Description | MOSFET P-CH 60V 23A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 11.5A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
MTP23P06V
MOTOROLA/
17638
1.74
HK HEQING ELECTRONICS LIMITED
MTP23P06V
MOTOLORA
100000
2.2275
Hong Kong Shun Ye Electronics Co., Limited
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MOTOLOLA
35000
2.715
KST Components Limited
MTP23P06V
MOTORLA
2008
3.2025
NEW IDEAS INDUSTRIAL CO., LIMITED
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MOTROLA
2804
3.69
Nosin (HK) Electronics Co.
