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Description
Jun 4, 2012 MJD32C . Low voltage PNP power transistor. Datasheet production data. Features. Surface-mounting TO-252 power package in tape and Diodes Incorporated. MJD32C . 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252. Features. . BVCEO > -100V. . IC = -3A high Continuous Collector Current. Unit. Collector Emitter Voltage. MJD31, MJD32. MJD31C, MJD32C . VCEO. 40. 100. Vdc. Collector Base Voltage. MJD31, MJD32. MJD31C, MJD32C . VCB. 40. MJD32C . ICES. Collector Cutoff Current. (VCE=-100Vdc, VEB=0). (IC=-3Adc, VCE=-4Vdc). VBE(on). Base-Emitter Voltage. (IC=-3Adc, VCE=-4Vdc ) (note 1). ---. MJD32C : 3.0 A, 100 V PNP Bipolar Power Transistor. For complete documentation, see the data sheet. The Bipolar Power Transistor is designed for general
Part Number | MJD32C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Motorola |
Description | TRANS PNP 100V 3A D-PAK |
Series | - |
Packaging | Tube |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max) | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
Power - Max | 15W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | D-Pak |
Image | ![]() |
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