(4/5) based on 14 customer reviews
Description
DATASHEET Aug 5, 2013 JEDEC registered 2N6058 and 2N6059 . JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/502. RoHS compliant EQUIPMENT. DESCRIPTION. The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. 2N6052. MAXIMUM RATINGS: (TC=25 C). SYMBOL 2N6057 2N6058. 2N6059 . UNITS. Collector-Base Voltage. VCBO. 60. 80. 100. V. Collector-Emitter Voltage. Characteristic Symbol 2N6050 2N6051 2N6052 Unit. 2N6057 2N6058 2N6059 . Collector-Emitter Voltage VCEO 60 80 100 V. Collector-Base Voltage VcBo 60 IC/IB = 250. IB1 = IB2. TJ = 25 C. 1.0. 2.0. 2N6052. 2N6059 tf tr ts td @ VBE(off) = 0. V2 approx. + 8.0 V. V1 approx. - 8.0 V tr, tf 10 ns. DUTY CYCLE = 1.0%.
| Part Number | 2N6059 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Motorola |
| Description | TRANS NPN DARL 100V 12A TO-3 |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 12A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A, 3V |
| Power - Max | 150W |
| Frequency - Transition | 4MHz |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | TO-204AA, TO-3 |
| Supplier Device Package | TO-3 |
| Image |  |
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